Ionization Energies for Various Dopants | |
Structure | Cubic |
Space Group | Fd3m |
Atomic weight | 28.0855 |
Lattice spacing (a0 ) at 300K | 0.54311 nm |
Density at 300K | 2.3290 g/ cm3 |
Nearest Neighbour Distance at 300K | 0.235 nm |
Number of atoms in 1 cm3 | 4.995 · 1022 |
Isotopes | 28 (92.23%) 29 ( 4.67%) 30 ( 3.10%) |
Electron Shells | 1s22s22p63s23p2 |
Common Ions | Si 4 +, Si 4 - |
Critical Pressure | 1450 atm |
Critical Temperature | 4920 °C |
Dielectric Constant at 300 K | 11.9 |
Effective density of states (conduction, Nc T=300 K ) | 2.8x1019 cm-3 |
Effective density of states (valence, Nv T=300 K ) | 1.04x1019 cm-3 |
Electron affinity | 133.6 kJ / mol |
Energy Gap Eg (Minimum Indirect Energy Gap) at | 1.12 eV 300 K |
Energy Gap Eg | at ca. 0 K |
Minimum Direct Energy Gap at 300 K | 3.4 eV |
Energy separation (E?L) | 4.2 eV |
Intrinsic Debye length | 24 um |
Intrinsic carrier concentration | 1·1010 cm-3 |
Intrinsic resistivity | 3.2·105 Ohm·cm |
Auger recombination coefficient Cn | 1.1·10-30 cm6 / s |
Auger recombination coefficient Cp | 3·10-31 cm6 / s |
Melting point | 1414 °C/ 1687 K |
Boiling point | 2628 K |
Specific heat | 0.7 J / (g x °C) |
Thermal conductivity [300K] | 148 W / (m x K) |
Thermal diffusivity | 0.8 cm2/s |
Thermal expansion, linear | 2.6·10-6 °C -1 |
Debye temperature | 640 K |
Temperature dependence of band gap | -2.3e-4 eV/K |
Heat of: fusion / vaporization / atomization | 39.6 / 383.3 / 452 kJ / mol |
Breakdown field | ~ 3·105 V/cm |
Index of refraction | 3.42 |
Mobility electrons | ~ 1400 cm2 / (V x s) |
Mobility holes | ~ 450 cm2 / (V x s) |
Diffusion coefficient electrons | ~ 36 cm2/s |
Diffusion coefficient holes | ~ 12 cm2/s |
Electron thermal velocity | 2.3·105 m/s |
Electronegativity | 1.8 Pauling`s |
Hole thermal velocity | 1.65·105 m/s |
Optical phonon energy | 0.063 eV |
Density of surface atoms | (100) 6.78 1014/cm2 (110) 9.59 1014/cm2 (111) 7.83 1014/cm2 |
Work function (intrinsic) | 4.15 eV |
Donors: | Sb 0.039 eV, P 0.045 eV, As 0.054 eV |
Acceptors: | B 0.045 eV, Al 0.067 eV, Ga 0.072 eV, In 0.16 eV |