16 years of serving high-end industries
with high-quality products |
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| SOS (Epitaxially grown Silicon on R-plane Sapphire) structures |
| Diameter | 2?-4? | | Thickness | 0.33 ? 0.46 mm | | Substrate Orientation | R-plane | | Surface quality | EPI-polished (Ra<0.3 nm) suitable for epitaxial growth | | Si-layer Orientation | (100) | | Si-layer Thickness | 0.5-5+/-8% or 0.1-1+/-8% um | | Conductivity Type | p-type, i-type or n-type | | Specific resistivity | 1-200 Ohm*cm or 10-30 Ohm*cm |
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All your requests will be processed immediately.
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